Report describes measurements of effects of ionizing-radiation dose rate on consequent damage to complementary metal oxide/semiconductor (CMOS) electronic devices. Depending on irradiation time and degree of annealing, survivability of devices in outer space, or after explosion of nuclear weapons, enhanced. Annealing involving recovery beyond pre-irradiation conditions (rebound) detrimental. Damage more severe at lower dose rates.
Effects Of Dose Rates On Radiation Damage In CMOS Parts
NASA Tech Briefs ; 14 , 9
1990-09-01
Sonstige
Keine Angabe
Englisch
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