Report describes measurements of effects of ionizing-radiation dose rate on consequent damage to complementary metal oxide/semiconductor (CMOS) electronic devices. Depending on irradiation time and degree of annealing, survivability of devices in outer space, or after explosion of nuclear weapons, enhanced. Annealing involving recovery beyond pre-irradiation conditions (rebound) detrimental. Damage more severe at lower dose rates.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Effects Of Dose Rates On Radiation Damage In CMOS Parts


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1990-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Failures Of CMOS Devices At Low Radiation-Dose Rates

    Goben, Charles A. / Price, William E. | NTRS | 1990


    Total Dose, Displacement Damage and Single Event Effects in the Radiation Hardened CMOS APS HAS2 (AAS 10-022)

    Van Aken, D. / Herve, D. / Beaumel, M. et al. | British Library Conference Proceedings | 2010




    An Analysis of Energetic Space Radiation and Dose Rates

    M. O. Burrell / J. W. Watts / J. J. Wright | NTIS | 1968