Stress averaged through thickness of plate measured nondestructively. Theory of elasticity combined with laser interferometric technique into technique for measurement of residual stresses in solid objects - usually in thin, nominally-flat plates. Measurements particularly useful in inspection of wafers of single-crystal silicon for making solar cells or integrated circuits, because stresses remaining after crystal-growing process cause buckling or fracture. Used to predict deflections of plates caused by known applied loads under specified boundary condition, or to infer applied loads that cause known deflections. Also used to relate known deflections to residual stresses equivalent to stresses produced by fictitious applied loads.


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    Titel :

    Interferometric Measurement Of Residual Stress


    Beteiligte:
    Danyluk, Steven (Autor:in) / Andonian, A. T. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.02.1990



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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