Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Empirical Modeling Of Single-Event Upset


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1988-12-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Dynamic Robust Single-Event Upset Simulator

    Carlisle, Edward / George, Alan | AIAA | 2018


    Single-Event-Upset Studies: A Compilation

    Nichols, D. K. / Price, W. E. / Malone, C. J. et al. | NTRS | 1986


    Studies Of Single-Event-Upset Models

    Zoutendyk, J. A. / Smith, L. S. / Soli, G. A. | NTRS | 1988


    Single event upset (SEU) testing at JPL

    Coss, James R. | NTRS | 1987


    Testing Electronic Devices for Single-Event Upset

    Nichols, D. K. / Price, W. E. / Malone, C. J. | NTRS | 1986