Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.
Modeling "Soft" Errors in Bipolar Integrated Circuits
NASA Tech Briefs ; 9 , 2
1985-10-01
Sonstige
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Englisch
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