New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
High-Mobility Epitaxial Silicon Wafers
NASA Tech Briefs ; 8 , 3
1985-01-01
Sonstige
Keine Angabe
Englisch
Heterojunction solar cells with 23% efficiency on n‐type epitaxial kerfless silicon wafers
Online Contents | 2016
|Smoother Scribing of Silicon Wafers
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|Reciprocating Saw for Silicon Wafers
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|Automated Texturization of Silicon Wafers
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|Automatic inspection of silicon wafers
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