Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.
Electron Beam Could Probe Recombination Centers
NASA Tech Briefs ; 7 , 4
01.10.1983
Sonstige
Keine Angabe
Englisch
Irradiation Induced Recombination Centers in GaAs Solar Cells
British Library Online Contents | 1998
|Irradiation Induced Recombination Centers in GaAs Solar Cells
British Library Conference Proceedings | 1998
|Improved electron-beam probe for hypersonic flows
NTRS | 1978
|