Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.


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    Titel :

    Electron Beam Could Probe Recombination Centers


    Beteiligte:
    Vonroos, O. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.10.1983



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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