Feasibility study looks at effectiveness of silicon nitride passivation coating against moisture and mobile ions. Coating was tested on CMOS microcircuits. Tests included temperature cycling, high-temperature electrical stress, and temperature and humidity exposure. Report concludes plastic-encapsulated circuits with protective coating exhibit high survival rates; it includes tables summarizing test results and figures that show effects of flexing.


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    Titel :

    Silicon nitride passivation of IC's


    Beteiligte:
    Erickson, J. J. (Autor:in) / Gebhart, F. L. (Autor:in) / Hall, T. C. (Autor:in) / Peters, J. W. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1980-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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    Automated ion implantation for IC's

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    Photonitride passivating coating for IC's

    Hall, T. C. / Peters, J. W. | NTRS | 1980