Singlemode operation between –60 and +110°C in strained multiquantum well InGaAsP/InP DFB lasers is demonstrated. The lasers display very low threshold current, high quantum efficiency, low distortion and low noise, which make them desirable for digital as well as analogue applications.
Wide temperature range linear DFB lasers with very low threshold current
1997-05-22
3 pages
Aufsatz (Zeitschrift)
Englisch
temperature range , digital applications , gallium arsenide , quantum well lasers , distributed feedback lasers , threshold current , InGaAsP-InP , strained multiquantum well linear DFB laser , -60 to 110 C , quantum efficiency , III-V semiconductors , single mode operation , noise , analogue applications , indium compounds , distortion , laser modes
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