Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.
Very low threshold current operation of semiconductor ring lasers
01.01.1992
181963 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Very Low Threshold Current Operation of Semiconductor Ring Lasers
British Library Conference Proceedings | 1992
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