Since a typical VCSEL structure contains large numbers of layers and requires a long growth duration, the precisely controllable growth by MBE on large-area substrates is difficult. Several in situ thickness monitoring techniques have been used. We study the apparent substrate temperature oscillation of GaAs, AlAs and GaAs/AlAs DBR by an infrared thermometer. Based on a quasi-blackbody emission model, the refractive indices of GaAs and AlAs at high temperature are obtained by simulation analysis. The effects of refractive index n and extinction coefficient /spl kappa/ on the oscillation curve are studied, respectively. Then the whole growth of VCSEL is monitored, the accurate growth rate measured and mode wavelength adjusted during the growth. The VCSEL structure contains 23.5 pairs of AlAs/GaAs n-type DBR, 20.5 pairs of AlAs/Ga/sub 0.7/Al/sub 0.3/As/GaAs step p-type DBR, a strained In/sub 0.2/Ga/sub 0.8/As/GaAs 3QW active region and GaAs space layer.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    In situ thickness monitoring and adjusting during MBE growth for 980 nm VCSEL


    Beteiligte:
    Zhong Pan, (Autor:in) / Zengqi Zhou, (Autor:in) / Zhichan Niu, (Autor:in) / Yi Zhang, (Autor:in) / Ronghan Wu, (Autor:in) / Wei Wang, (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    178886 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    In situ thickness monitoring and adjusting during MBE growth for VCSEL

    Zhong Pan, / Zengqi Zhou, / Yaowang Lin, et al. | IEEE | 1996


    In Situ Thickness Monitoring and Adjusting During MBE Growth for VCSEL

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    In Situ Thickness Monitoring and Adjusting During MBE Growth for 980 nm VCSEL

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Manufacturability of VCSEL Components and VCSEL Products

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    WDM VCSEL Array Fabricated by MOCVD Growth

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998