We present a survey of the application of micromachining techniques for the fabrication of THz-components. Micro-machining of new THz- devices based on deep trench etching of silicon is discussed with respect to its capability to generate complex 3-dimensional geometries with high aspect ratios (ARs) and to meet the high mechanical requirements for THz-components. First results for the application of deep trench etching for the design of a branch-line coupler for 600 GHz is discussed. We emphasize the potential of silicon based microstructures for manufacturing new devices and focus on technological issues.


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    Titel :

    Technological issues for micromachining of new passive THz-components based on deep-trench silicon etching


    Beteiligte:
    Biber, S. (Autor:in) / Schur, J. (Autor:in) / Schmidt, L.-P. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    199531 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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