Aeroflex Colorado Springs reported on a new error detection and correction (EDAC) based monolithic 16Mbit static random access memory (SRAM) at the IEEE Aerospace Conference in 2006 [1]. This paper is an update on the 16Mbit SRAM with new proton test data to supplement the heavy ion test data reported in 2006. A review of the 16Mbit monolithic SRAM includes the SRAM architecture, a product/process description, radiation hardening techniques, electrical performance, total ionizing dose data, single event effects data, and single event upset error-rate calculations. The proton single event upset testing results will be shown at the conference. Since the heavy ion onset LET of the device is around 1 MeV-cm2/mg, the device is expected to be sensitive to protons [2]. Proton data, therefore, is critical to a comprehensive understanding of the SEU performance of the device.
RadHard 16Mbit Monolithic SRAM for Space Applications
01.03.2007
240954 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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