A highly strained GaInAs/GaAs VCSEL emitting at 1.21 /spl mu/m is demonstrated. The threshold current is 1.3 mA. The maximum single mode output power of 3 mW is achieved. These results indicate that a highly strained 1.2 /spl mu/m range GaInAs VCSEL can be useful for high capacity metro-area networks.


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    Titel :

    Highly strained GaInAs/GaAs 1.21 /spl mu/m vertical cavity surface emitting laser with single-mode output power of 3 mW


    Beteiligte:
    Kondo, T. (Autor:in) / Uchiyama, Y. (Autor:in) / Takeda, K. (Autor:in) / Matsutani, A. (Autor:in) / Miyamoto, T. (Autor:in) / Koyama, F. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    115758 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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