High temperature degradation of the efficiency of 1.5 /spl mu/m InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
Origin of the high temperature performance degradation of 1.5 /spl mu/m lnGaAs(P)/lnP quantum well lasers
01.01.2003
127544 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Origin of the High Temperature Performance Degradation of 1.5mum InGaAs(P)/InP Quantum Well Lasers
British Library Conference Proceedings | 2003
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