12.5 Gbps operation of low-k benzocyclobutene (BCB)-planarized 850 nm AIGaAs-based VCSEL is presented. The chip capacitance is 70% reduced from that of conventional SiN-passivated one. The VCSEL exhibits very high relaxation oscillation frequency of 12 GHz with stable operation at 70/spl deg/C over 750 hours.


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    Titel :

    High-speed 850 nm AlGaAs/GaAs vertical cavity surface emitting laser with low parasitic capacitance fabricated using BCB planarization technique


    Beteiligte:
    Tanigawa, T. (Autor:in) / Onishi, T. (Autor:in) / Nagai, S. (Autor:in) / Ueda, T. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    1597252 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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