12.5 Gbps operation of low-k benzocyclobutene (BCB)-planarized 850 nm AIGaAs-based VCSEL is presented. The chip capacitance is 70% reduced from that of conventional SiN-passivated one. The VCSEL exhibits very high relaxation oscillation frequency of 12 GHz with stable operation at 70/spl deg/C over 750 hours.
High-speed 850 nm AlGaAs/GaAs vertical cavity surface emitting laser with low parasitic capacitance fabricated using BCB planarization technique
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 2 ; 1381-1383 Vol. 2
2005-01-01
1597252 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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