Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-Speed 850nm AlGaAs/GaAs Vertical Cavity Surface Emitting Laser with Low Parasitic Capacitance Fabricated Using BCB Planarization Technique


    Beteiligte:
    Tanigawa, T. (Autor:in)

    Kongress:

    CONFERENCE, Lasers & electro-optics ; 2005 ; Baltimore, MD


    Erschienen in:

    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    3 pages


    Anmerkungen:

    IEEE cat. no. 05CH37634



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch





    Characterization of 850nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disordering

    Kuo, H. C. / Shu, W. C. / Lu, T. C. et al. | British Library Conference Proceedings | 2003


    High Density, High Power Arrays of Vertical Cavity Surface Emitting Lasers Operating at 850nm

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Highly Uniform and Reproducible 850nm Vertical-Cavity Surface-Emitting Lasers Grown by MOCVD

    Jang, H. J. / Song, Y. H. / Jeong, B. J. et al. | British Library Conference Proceedings | 2001


    All-Epitaxial Current- and Mode-Confined AlGaAs/GaAs Vertical-Cavity Surface-Emitting Laser

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004