In present work SLDs fabrication of (InGa)PAs heterostructure were studied. For broad band superluminescent diodes, optical sensors based on "white light" interferometry-wide emission spectrum (small coherence length) is the main requirement. Record values of spectral linewidth are obtainable for SLDs based on quantum-well heterostructures.
Broad-band superluminescent diode based on multiquantum well (InGa)PAs heterostructure at 1550 nm
2003-01-01
66380 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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