High power and broadband superluminescent diodes (SLDs) would be useful for various optical sensing applications and for spectrum-sliced multi-wavelength light sources. We proposed and developed SLDs with a tapered active region. We present the design and fabrication of GaInAsP-InP strained QW SLDs with an optimized taper structure. Also, broad-band emission has been obtained by using chirped QW structures.


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    Titel :

    Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region


    Beteiligte:
    Yamatoya, T. (Autor:in) / Mori, S. (Autor:in) / Koyama, F. (Autor:in) / Iga, K. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    147957 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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