MOVPE Growth and Fabrication of 1.3mm High Power InGaAsP-InP Polarization-Insensitive Superluminescent Diodes with Complex Strained Quantum Wells
OPTICAL AND QUANTUM ELECTRONICS ; 36 , 6 ; 551-558
01.01.2004
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Conference Proceedings | 2001
|InAlGaAs/GaAs Strained-Layer Superluminescent Diodes
British Library Conference Proceedings | 1993
|Polarization-Insensitive Optical Amplifiers Using Tensile-Strained Quantum Wells
British Library Conference Proceedings | 1993
|High-power superluminescent diodes [3551-21]
British Library Conference Proceedings | 1998
|