MOVPE Growth and Fabrication of 1.3mm High Power InGaAsP-InP Polarization-Insensitive Superluminescent Diodes with Complex Strained Quantum Wells
OPTICAL AND QUANTUM ELECTRONICS ; 36 , 6 ; 551-558
2004-01-01
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
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