Summary form only given. We present a 1.3-/spl mu/m gain-coupled DFB semiconductor laser with a tapered active stripe. The fabricated laser shows narrow beam divergence of 13-14 degrees and high side-mode suppression ratio (SMSR) of >45 dB. The laser has an InAsP absorptive grating, which is buried between the n-InP buffer layer and the corrugated n-InP substrate.


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    Titel :

    DFB lasers with tapered active stripe for narrow beam divergence


    Beteiligte:
    Kito, M. (Autor:in) / Inaba, Y. (Autor:in) / Chino, T. (Autor:in) / Ishino, M. (Autor:in) / Matsui, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    253322 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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