Summary form only given. We present a 1.3-/spl mu/m gain-coupled DFB semiconductor laser with a tapered active stripe. The fabricated laser shows narrow beam divergence of 13-14 degrees and high side-mode suppression ratio (SMSR) of >45 dB. The laser has an InAsP absorptive grating, which is buried between the n-InP buffer layer and the corrugated n-InP substrate.
DFB lasers with tapered active stripe for narrow beam divergence
01.01.1998
253322 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
1.3 m tapered active stripe lasers with high slope efficiency and large beam spot-size
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