In conclusion we have described the impurity-free vacancy disordering of AlGaAs-AlGaAs GRIN quantum well structures by a single-step rapid thermal annealing (RTA). We have used the samples with different mesa widths to investigate the spectral shifts in the photoluminescence (PL) and lasing characteristics.
Stripe-size dependent quantum well intermixing induced by impurity-free vacancy disordering
01.01.1997
187655 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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