Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.
Very low threshold current operation of semiconductor ring lasers
1992-01-01
181963 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Very Low Threshold Current Operation of Semiconductor Ring Lasers
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