Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.


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    Titel :

    Very low threshold current operation of semiconductor ring lasers


    Beteiligte:
    Krauss, T. (Autor:in) / Layboum, P.J.R. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    181963 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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