We demonstrated very low threshold carrier- and index-confined semiconductor lasers made of a single selective-area-growth without regrowths. The threshold current is as low as 2.7 mA with excellent uniformity and reproducibility.
Very low threshold, carrier- and index-confined semiconductor lasers by one single selective-area-growth
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 562-564 Vol. 1
2005-01-01
886472 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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