Summary form only given. The realization of one-dimensional (1D) semiconductor nanostructures with large confinement energies is of importance for device applications. Different techniques such as growth on tilted substrates (Serpentine superlattices) or prepatterned substrates (V-groove quantum wins), and the cleaved-edge overgrowth of T-shaped structures have been demonstrated. For the T-shaped structures, the confinement energy has been recently increased to above 2 k/sub B/T at room temperature by optimizing structure parameters. Here we investigate the excitonic properties of a high quality T-shaped wire sample by four-wave mixing. It is a confinement optimised structure with 20 meV exciton confinement energy and only 3 meV in homogeneous width of the exciton resonance.


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    Titel :

    Excitons, biexcitons, and dephasing in GaAs T-shaped quantum wires measured by four-wave mixing


    Beteiligte:
    Langbein, W. (Autor:in) / Gislason, H. (Autor:in) / Hvam, J.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    162438 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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