In this paper, the inevitable unbalanced current of parallel-connected Silicon Carbide (SiC) MOSFETs is analyzed, and the corresponding balanced methods are proposed. Firstly, the transient unbalanced current according to different gate resistance (Rg) and gate-source capacitance (Cgs) between two parallel-connected SiC MOSFETs are investigated. Then, the appropriate gate additional resistance is used to suppress the transient unbalanced current through realization of gate drive delay. Finally, the proposed scheme is verified by both simulation and experimental results.
Transient unbalanced current analysis and suppression for parallel-connected silicon carbide MOSFETs
2014-08-01
729486 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Power MOSFETs Formed In Silicon Carbide
NTRS | 1995
|Power MOSFETS Formed in Silicon Carbide
Online Contents | 1995
High Temperature Performance Mapping and Failure Analysis of 4H-Silicon Carbide MOSFETS
British Library Conference Proceedings | 1997
|