Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.


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    Titel :

    Temperature, modulation and reliability characteristics of 1.3 /spl mu/m-VCSELs on InP with AlGaInAs/InP lattice matched DBR


    Beteiligte:
    Nishiyama, N. (Autor:in) / Caneau, C. (Autor:in) / Hall, B. (Autor:in) / Guryanov, G. (Autor:in) / Hu, M. (Autor:in) / Xingsheng Liu, (Autor:in) / Bhat, B. (Autor:in) / Chung-en Zah, (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    211294 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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