Summary form only given. We show that the profile of buried oxide apertures within selectively oxidized AlGaAs VCSELs is influenced by the composition of surrounding layers, which in turn affects the VCSEL performance.


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    Titel :

    Design of oxide aperture profile within selectively oxidized VCSELs


    Beteiligte:
    Choquette, K.D. (Autor:in) / Allerman, A.A. (Autor:in) / Geib, K.M. (Autor:in) / Hammons, B.E. (Autor:in) / Mathes, D. (Autor:in) / Hull, R. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    201749 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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