Summary form only given. In summary, we have developed an accurate first-principles analysis to probe the threshold properties of selectively oxidized 850 nm AlGaAs QW VCSELs. The analysis of our present VCSELs indicates that in order to achieve ultralow threshold, oxide aperture scattering loss and leakage currents must be addressed. The agreement between our calculations and experiment solidify our understanding and enable the identification of fundamental limitations of low threshold VCSEL operation. The performance and analysis of modified VCSEL designs will be reported.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Properties of small-aperture selectively oxidized VCSELs


    Beteiligte:
    Choquette, K.D. (Autor:in) / Chow, W.W. (Autor:in) / Hadley, G.R. (Autor:in) / Hou, H.Q. (Autor:in) / Geib, K.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    183265 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Properties of Small-Aperture Selectively Oxidized VCSELs

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Design of oxide aperture profile within selectively oxidized VCSELs

    Choquette, K.D. / Allerman, A.A. / Geib, K.M. et al. | IEEE | 1998


    Design of Oxide Aperture Profile within Selectively Oxidized VCSELs

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Selectively oxidized VCSELs go single-mode

    Choquette, K. D. | British Library Online Contents | 2000


    Improved Performance of Selectively Oxidized Visible VCSELs

    IEEE | British Library Conference Proceedings | 1999