The cutoff frequency of a nanocrystalline ZnO (nc-ZnO) thin-film transistor (TFT) can be increased by decreasing the contact resistivity of the device. Hydrogen and argon plasmas have been demonstrated to greatly increase the conductivity at the ZnO surface, decreasing the contact resistance. On the contrary, oxygen plasma can be used to undo the effects of the Ar and H plasmas by decreasing the conductivity of ZnO at the surface, which can be utilized as a method for recovering the properties of the channel in the TFT. The proposed plasma treatments integrated with a current ZnO TFT design from the Air Force Research Lab are expected to achieve the highest cutoff frequency reported for a TFT.
Plasma Treatment Effects on Nanocrystalline ZnO Thin-Film Transistors
01.07.2018
812245 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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