The paper reports on monolithic integration of poly-GaAs switches with a completely fabricated CMOS amplifier. A functional optical receiver is obtained without modifying the Si circuit performance. This approach is simple, with minimum fabrication disturbance limited entirely to the Si processing and greater applicability into much broader areas.
Monolithic integration of GaAs devices with completely fabricated Si CMOS
01.01.2004
144151 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Monolithic Integration of GaAs Devices with Completely Fabricated Si CMOS Circuits
British Library Conference Proceedings | 2004
|Monolithic Integration of Lateral-Electrode Laser and Waveguide Devices in GaAs/AlGaAs
British Library Conference Proceedings | 1995
|Monolithic integration of GaAs optoelectronic devices using thermal oxide isolation (TOI) [3003-29]
British Library Conference Proceedings | 1997
|A Monolithic Integration Approach for VCSEL/GaAs FET Arrays
British Library Conference Proceedings | 1994
|