Zero-bias detectors based on low-barrier Schottky diodes and planar slot antennas are investigated at 94 GHz. Diodes with differential contact resistances Rj=1÷1000 k¿ at zero bias are used. The better voltage responsivity - more than 10000 V/W-is obtained at Rj=20÷100 k¿. At lower values of Rj=2÷6 k¿ a better noise equivalent power NEP1012 W·Hz1/2, is observed. Experimental data are compared with the simulation in a simple model of detector.
Millimeter-Wave Detector on the Basis of Low-Barrier Schottky Diodes and a Planar Slot Antenna
01.09.2006
1124473 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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