Proposed self-aligned guard ring increases active area of Schottky-barrier infrared detector. Concept developed for silicide Schottky-barrier diodes in which platinum silicide or iridium silicide Schottky-contacts provide cutoff wavelengths of about 6 or 10 micrometers. Grid of silicon dioxide doped with phosphorus etched on silicon wafer, and phosphorus from grid diffused into substrate, creating n-type guard rings. Silicide layers formed in open areas of grid. Overlap of guard rings and silicide layers small.


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    Titel :

    Self-Aligned Guard Rings For Schottky-Barrier Diodes


    Beteiligte:
    Lin, True-Lon (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.08.1990



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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