We have used differential terahertz spectroscopy to monitor performance degradation in state-of-the-art polymer field effect transistors (pFETs) based on poly(9,9-dioctylfluorene-2,7-diyl)-co-(bithiophene) I (F8T2). After extended periods of operation holes are trapped in the polymer, increasing the device's threshold voltage. We monitor the trapped charge density using THz spectroscopy, and investigate the device's recovery as trapped holes are thermally removed. Illuminating the devices for a period with above-bandgap photons leads to a change in the terahertz transmission through the device, which is short lived after switching the light off.
Light Induced Recovery of Polymer Field Effect Transistors
01.09.2006
1262286 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Superconducting Field-Effect Transistors
NTRS | 1995
|Superconducting Field-Effect Transistors
Online Contents | 1995