A long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of the key devices for future optical communication and interconnection systems. GaInNAs is a very attractive material for 1.3-1.55 /spl mu/m long wavelength lasers because of its potential of lattice matching to GaAs and good temperature characteristics due to large conduction band discontinuity In this paper, we present a design and theoretical characteristics of long wavelength GaInNAs-GaAs QW VCSELs.


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    Titel :

    GaInNAs/GaAs long wavelength VCSELs-design and expected characteristics


    Beteiligte:
    Miyamoto, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    225784 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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