We report on bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSELs) that are wafer bonded to AlGaAs substrates. We employ a simple low temperature wafer bonding process that uses inert N/sub 2/ gas during the bonding anneal rather than H/sub 2/.
Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding
01.01.1997
192038 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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