We have demonstrated high-performance multi-layer (2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m with narrow ridge-waveguide structure. Simultaneous ground-state and excited-state losing emissions well above threshold was observed and their spectral evolution was also investigated.
Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range
2003-01-01
75162 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 mum range
British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 1994
|InGaAs/GaAs Quantum Dot Lasers
British Library Conference Proceedings | 1998
|