InGaAs quantum dots (QDs) grown by strained-layer epitaxy on GaAs can accommodate more In than planar growth and present an interesting approach for realizing GaAs-based laser diodes that operate in the 1.1 to 1.3 /spl mu/m wavelength range. Although QD emission wavelengths as long as 1.3 /spl mu/m have been reported, lasing in edge-emitting devices has been limited to wavelengths just over 1.0 /spl mu/m. Recently, we found that for optimized growth conditions, QD electroluminescence efficiency at 1.3 /spl mu/m is comparable to good InGaAs quantum wells emitting at 0.98 /spl mu/m. In particular, the use of separate and alternating sub-monolayer depositions increases the emission wavelength to 1.3 /spl mu/m and leads to high electroluminescence efficiency, while keeping the total In content of the deposited material to a minimum to avoid excessive strain. We describe the influence of growth method on the formation and emission characteristics of self-assembled InGaAs/GaAs QDs and describe device characteristics from edge emitting lasers using these QD active regions.


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    Titel :

    InGaAs/GaAs quantum dot lasers


    Beteiligte:
    Huffaker, D.L. (Autor:in) / Park, G. (Autor:in) / Shchekin, O. (Autor:in) / Zhou, Z.Z. (Autor:in) / Deppe, D.G. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    184695 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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