The combination of two synergistic VLSI technologies, ultra low power CMOS and radiation tolerant by design, offers an opportunity to provide advanced electronics capabilities for future spacecraft. The 500 mV CMOS process can yield orders of magnitude power reduction compared to current space-flight technologies and the radiation tolerance provides immunity against single event latch-up, good single event upset resistance and total ionizing dose immunity of at least 200 krads(Si). A study based on the EO-1 spacecraft requirements indicates that the use of these technologies could provide spacecraft power savings of 73% and total mass savings of 16%.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Low power radiation tolerant VLSI for advanced spacecraft


    Beteiligte:
    Benz, H.F. (Autor:in) / Gambles, J.W. (Autor:in) / Whitaker, S.R. (Autor:in) / Hass, K.J. (Autor:in) / Maki, G.K. (Autor:in) / Pen-Shu Yeh, (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    389745 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    8.0102 Low Power Radiation Tolerant VLSI for Advanced Spacecraft

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    A low power, radiation tolerant spacecraft attitude processor

    Williams, Stephen / Kennedy, Lawrence / Frank, Laurence et al. | AIAA | 1993


    A Low Power, Radiation Tolerant Spacecraft Attitude Processor

    Williams, S. / Kennedy, L. / Frank, L. et al. | British Library Conference Proceedings | 1993


    Radiation design considerations for advanced JUPITER spacecraft

    Bouquet, F.L. / Koprowski, E.F. | Tema Archiv | 1979