The next generation of optical data systems will be based upon visible AlGalnP laser diodes operating at wavelengths between 630-680 nm. One important application for visible diodes is the optical "read" head of the data storage system. The most important requirement of the read laser is a low noise figure, typically measured as relative intensity noise (RIN), achieved across a broad temperature range at the operating power of the read system. One approach to achieving a very low noise diode is to design the laser diode to self-pulsate. The self-pulsation of the laser diode destroys many coherence effects and leads to a general reduction in RIN and greatly improved resistance to optical feedback. In the paper, data are presented on 635 nm self-pulsating laser diodes that achieve an average self-pulsating output power of 25 mW at 25/spl deg/C and show distinct self-pulsation to temperatures as high as 100/spl deg/C. The characteristic temperature of the self-pulsating laser diode is 230 K over the temperature range from 25/spl deg/C to 80/spl deg/C. The lasers described here use AlGaInP epitaxial layers grown lattice-matched on n-type GaAs substrates.


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    Titel :

    High-temperature, high-power self-pulsating 635 nm laser diodes


    Beteiligte:
    Major, J. (Autor:in) / Geels, R. (Autor:in) / Hanmin Zhao (Autor:in) / Osinski, J. (Autor:in) / Welch, D. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    162069 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Temperature, High-Power Self-Pulsating 635 nm Laser Diodes

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995



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    Self-pulsating 630-nm Band Strain-compensated MQW AlGaInP Laser Diodes

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995