We report the realization of an infrared 3D photonic crystal built directly on a Si-wafer. Our 3D crystal shows a large photonic stop band from 10 to 14.5 /spl mu/m along the <100> crystallographic direction, a strong attenuation constant of -12 dB per unit cell, and a spectral response uniformity to better than 1% over a 6 inch Si wafer. This demonstration opens the door for Si-based photonic crystal devices that are compatible with the well-developed Si microelectronics processes and is suitable for large scale photonic integration.


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    Titel :

    A three-dimensional silicon photonic crystal


    Beteiligte:
    Lin, S.Y. (Autor:in) / Fleming, J.G. (Autor:in) / Hetherington, D.L. (Autor:in) / Smith, B.K. (Autor:in) / Biswas, R. (Autor:in) / Ho, K.M. (Autor:in) / Sigalas, M.M. (Autor:in) / Zubrzycki, W. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    267336 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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