Summary form only given. CdTe:Ge ensures the largest two-beam coupling gain factor among all photorefractive semiconductors with no electric field. At the same time a large scatter of data is observed even for the samples cut from the same ingot and the ultimate values of the diffraction efficiency and gain factor are still smaller than the predicted by the theory.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Photorefraction in CdTe:Ge enhanced by auxiliary illumination


    Beteiligte:
    Odoulov, S. (Autor:in) / Shcherbin, K. (Autor:in) / Briat, B. (Autor:in) / Ramaz, F. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    134782 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Photorefractive CdTe:Ge as a Medium for Laser Ultrasonics Detection

    Klein, M. B. / Shcherbin, K. / Danylyuk, V. et al. | British Library Conference Proceedings | 2003



    Optical interconnection using photorefraction

    Chiou, A. E. / SPIE | British Library Conference Proceedings | 1994


    Applications of photorefraction for signal processing

    Hong, J. H. / SPIE | British Library Conference Proceedings | 1994


    Correlation between crystal defects and properties of CdTe:Ge radiation detectors [3182-13]

    Feichuk, P. / Shcherbak, L. / Pluta, D. et al. | British Library Conference Proceedings | 1997