We study the behavior of InAs QDs on thin tensile-strained GaAs layer with different amount of InAs. The samples are grown by LP-MOCVD using TMIn, TMGa, pure AsH/sub 3/ and 10% PH/sub 3/ as precursors. The InP buffer layer is grown at 600 /spl deg/C after the thermal etching, which is performed at 650 /spl deg/C under the protection of PH/sub 3/. Then about 3 nm GaAs tensile-strained layers are grown at 500 /spl deg/C. Finally, 2ML InAs for S/sub 1/, 4ML for S/sub 2/, 6ML for S/sub 3/, and 8ML for S/sub 4/, are deposited at the growth rate of 0.3 ML/s. We use AFM to study the surface morphology of samples.


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    Titel :

    Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on [001] InP substrate


    Beteiligte:
    Guotong Du (Autor:in) / Xinqiang Wang (Autor:in) / Mingtao Li (Autor:in) / Zhi Jin (Autor:in) / Jingzhi Yin (Autor:in) / Zhengting Li (Autor:in) / Shiyong Liu (Autor:in) / Shuren Yang (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    201985 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch






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