Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate
Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA
01.01.1999
2 pages
IEEE cat no 99CH37009
Aufsatz (Konferenz)
Englisch
electro-optics , LEOS , IEEE , lasers
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