This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 nm from the excited states of the quantum dots at room temperature.


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    Titel :

    Room-temperature pulsed operation of InGaAsN quantum dot lasers


    Beteiligte:
    Gao, Q. (Autor:in) / Buda, M. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    111104 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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