This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 nm from the excited states of the quantum dots at room temperature.
Room-temperature pulsed operation of InGaAsN quantum dot lasers
2004-01-01
111104 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Room-Temperature Pulsed Operation of InGaAsN Quantum Dot Lasers
British Library Conference Proceedings | 2004
|InGaAsN/GaAs lasers fabricated with pulsed anodic oxides
IEEE | 2003
|InGaAsN/GaAs lasers fabricated with pulsed anodic oxides
IEEE | 2003
|Temperature Sensitivity of 1360-nm InGaAsN Quantum Well Lasers
British Library Conference Proceedings | 2003
|