Summary form only given. Semiconductor lasers with an active medium containing zero-dimensional structures are expected to show superior performance, like high material gain and low threshold current. In this work we have measured the transmission properties and the carrier dynamics of InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Ultrafast dynamics in InAs/GaAs quantum dot amplifiers


    Beteiligte:
    Borri, P. (Autor:in) / Langbein, W. (Autor:in) / Hvam, J.M. (Autor:in) / Mao, M.-H. (Autor:in) / Heinrichsdorff, F. (Autor:in) / Bimberg, D. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    278530 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Ultrafast electronic dynamics in unipolar n-doped InAs/GaAs quantum dot structures

    Wu, Z.-K. / Choi, H. / Norris, T.B. et al. | IEEE | 2005


    Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

    Xiao, J. L. / Yang, Y. D. / Huang, Y. Z. | British Library Online Contents | 2009


    Ultrafast nonlinear processes in quantum-dot optical amplifiers

    Akiyama, T. / Kuwatsuka, H. / Simoyama, T. et al. | British Library Online Contents | 2001


    Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers

    Schneider, S. / Woggon, U. / Borri, P. et al. | IEEE | 2005


    Ultrafast Gain Recovery Dynamics of the Excited State in InGaAs Quantum Dot Amplifiers

    Woggon, U. | British Library Conference Proceedings | 2005