Semiconductor lasers operating in the mid-infrared between /spl lambda//spl sim/3-5 /spl mu/m are of interest for a variety of commercial and military applications. Some applications, such as infrared countermeasures, require multiwatt-class beams with near-diffraction-limited beam quality. Achieving such a high brightness beam from a single semiconductor laser has proven to be challenging at any wavelength. To achieve this goal, we are pursuing the approach of wavelength beam combining (WBC) to scale the brightness of a single laser element, which has relatively low power, by the number of elements in an array. With WBC, the beam quality of the combined beam is close to that of a single element while the power is that of the array. This is achieved by superimposing the beams from individual elements of a laser array, each operating at a different wavelength, both in the near field and far field by means of a dispersive element such as a diffraction grating. We describe the application of WBC to an array of /spl lambda//spl sim/4 /spl mu/m, broad-area, optically-pumped semiconductor lasers.


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    Titel :

    Wavelength beam combining of mid-IR semiconductor lasers


    Beteiligte:
    Goyal, A.K. (Autor:in) / Sanchez, A. (Autor:in) / Turner, G.W. (Autor:in) / Fan, T.Y. (Autor:in) / Liau, Z.L. (Autor:in) / Manfra, M.J. (Autor:in) / Foti, P.J. (Autor:in) / Missaggia, L. (Autor:in) / O'Brien, P. (Autor:in) / Daneu, J.L. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    254147 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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