Recording density of a reflection-type holographic memory system can be improved by use of random phase shift multiplexing. A recording interval of 1.0µm was achieved in a 0.5mm thick Fe:LiNbO3.
Improvement on recording density in reflection-type holographic memory with random phase shift multiplexing
01.06.2005
516716 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Random Phase Encryption in Reflection-type Holographic Memory
British Library Conference Proceedings | 2004
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British Library Conference Proceedings | 2005
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