We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 /spl mu/m. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.


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    Titel :

    Characteristics of 1.3 /spl mu/m InGaNAs light-emitting diodes


    Beteiligte:
    Yang, H.-P.D. (Autor:in) / Chen-Ming Lu, (Autor:in) / Livchits, D. (Autor:in) / Lin, G. (Autor:in) / I-Fan Chen, (Autor:in) / Tsin-Dong Lee, (Autor:in) / Chi, J.Y. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    75846 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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