InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.


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    Titel :

    Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning


    Beteiligte:
    Swint, R.B. (Autor:in) / Juodawlkis, P.W. (Autor:in) / Oakley, D.C. (Autor:in) / Napoleone, A. (Autor:in) / Vineis, C.J. (Autor:in) / Chludzinski, J.W. (Autor:in) / Turner, G.W. (Autor:in) / Twichell, J.C. (Autor:in) / Bloomstein, T.M. (Autor:in) / Cann, S.G. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    394956 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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